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​Deep proton insertion assisted oxygen vacancies for long-term memory in VO2 synaptic transistor

2021
작성자
sugarless
작성일
2021-02-05 11:40
조회
34
« Voltage-triggered insulator-to-metal transition of ALD NbOx thin films for two-terminal threshold switch
Simultaneous reduction of multi-dimensional defects in Sn-excess BaSnO3 epitaxial films induced by surface chemical reconstruct »
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